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DMN4009LK3-13

DMN4009LK3-13

DMN4009LK3-13

Diodes Incorporated

MOSFET N-CH 40V 18A DPAK

SOT-23

DMN4009LK3-13 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Manufacturer Package Identifier DMN4009LK3-13
Operating Temperature-55°C~150°C TJ
PackagingDigi-Reel®
Published 2012
JESD-609 Code e3
Pbfree Code no
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.19W Ta
Operating ModeENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time7.8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8.5m Ω @ 14A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2072pF @ 20V
Current - Continuous Drain (Id) @ 25°C 18A Ta
Gate Charge (Qg) (Max) @ Vgs 21nC @ 4.5V
Rise Time18.5ns
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 14.9 ns
Turn-Off Delay Time 37.3 ns
Continuous Drain Current (ID) 27.6A
JEDEC-95 Code TO-252AA
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0085Ohm
Pulsed Drain Current-Max (IDM) 96.6A
DS Breakdown Voltage-Min 40V
Height 2.39mm
Length 6.73mm
Width 6.22mm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:1157 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.067598$0.067598
500$0.049704$24.852
1000$0.041421$41.421
2000$0.038000$76
5000$0.035515$177.575
10000$0.033037$330.37
15000$0.031950$479.25
50000$0.031416$1570.8

About DMN4009LK3-13

The DMN4009LK3-13 from Diodes Incorporated is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 40V 18A DPAK.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the DMN4009LK3-13, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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