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IRF6893MTR1PBF

IRF6893MTR1PBF

IRF6893MTR1PBF

Infineon Technologies

MOSFET N-CH 25V 29A MX

SOT-23

IRF6893MTR1PBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric MX
Operating Temperature-40°C~150°C TJ
PackagingTape & Reel (TR)
Published 2012
Series HEXFET®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2.1W Ta 69W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.6m Ω @ 29A, 10V
Vgs(th) (Max) @ Id 2.1V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 3480pF @ 13V
Current - Continuous Drain (Id) @ 25°C 29A Ta 168A Tc
Gate Charge (Qg) (Max) @ Vgs 38nC @ 4.5V
Drain to Source Voltage (Vdss) 25V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
In-Stock:2793 items

About IRF6893MTR1PBF

The IRF6893MTR1PBF from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 25V 29A MX.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IRF6893MTR1PBF, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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