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DMG4N60SJ3

DMG4N60SJ3

DMG4N60SJ3

Diodes Incorporated

MOSFET NCH 600V 3A TO251

SOT-23

DMG4N60SJ3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2016
JESD-609 Code e3
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power Dissipation-Max 41W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.5 Ω @ 2A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 532pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3A Tc
Gate Charge (Qg) (Max) @ Vgs 14.3nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 3A
RoHS StatusROHS3 Compliant
In-Stock:4954 items

About DMG4N60SJ3

The DMG4N60SJ3 from Diodes Incorporated is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET NCH 600V 3A TO251.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the DMG4N60SJ3, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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