Name: IPI076N12N3GAKSA1
Brand: Infineon Technologies
SKU: IPI076N12N3GAKSA1
Price: 2.45000 USD
Availability: InStock

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IPI076N12N3GAKSA1

Manufacturer part number:IPI076N12N3GAKSA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 120V 100A TO262-3

Case Package:SOT-23

Datasheet:IPI076N12N3GAKSA1 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2008
Series	OptiMOS™
JESD-609 Code	e3
Pbfree Code	no
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSIP-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	188W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	188W
Turn On Delay Time	24 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	7.6m Ω @ 100A, 10V
Vgs(th) (Max) @ Id	4V @ 130μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	6640pF @ 60V
Current - Continuous Drain (Id) @ 25°C	100A Tc
Gate Charge (Qg) (Max) @ Vgs	101nC @ 10V
Rise Time	50ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	39 ns
Continuous Drain Current (ID)	100A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	120V
Drain-source On Resistance-Max	0.0076Ohm
Pulsed Drain Current-Max (IDM)	400A
Avalanche Energy Rating (Eas)	230 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead

About IPI076N12N3GAKSA1

The IPI076N12N3GAKSA1 from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 120V 100A TO262-3.

Key Features

Advanced AVR architecture for efficient processing
Wide operating temperature range: -40°C to 85°C
Low power consumption for energy-efficient applications
Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

Industrial control systems
Consumer electronics
Automotive systems
IoT devices
Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IPI076N12N3GAKSA1, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.