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DMHT6016LFJ-13

DMHT6016LFJ-13

DMHT6016LFJ-13

Diodes Incorporated

DMHT6016LFJ-13 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Diodes Incorporated stock available on our website

SOT-23

DMHT6016LFJ-13 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 24 Weeks
Mounting Type Surface Mount
Package / Case 12-VDFN Exposed Pad
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2016
Series Automotive, AEC-Q101
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
FET Type 4 N-Channel
Rds On (Max) @ Id, Vgs 22m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 864pF @ 30V
Current - Continuous Drain (Id) @ 25°C 14.8A Ta
Gate Charge (Qg) (Max) @ Vgs 8.4nC @ 4.5V
FET Feature Standard
RoHS StatusROHS3 Compliant
In-Stock:3687 items

Pricing & Ordering

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DMHT6016LFJ-13 Product Details

DMHT6016LFJ-13 Description


DMHT6016LFJ-13 developed by Diodes Incorporated is a type of new generation complementary MOSFET H-Bridge featuring low on-resistance achievable with low gate drive. It is able to deliver high conversion efficiency, fast switching speed, and low input capacitance. Based on its low RDS (on), on-state losses can be minimized.



DMHT6016LFJ-13 Features


High conversion efficiency

Fast switching speed

Low input capacitance

Low on-resistance

Low gate drive



DMHT6016LFJ-13 Applications


Motor control

DC-DC converters

Power management


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