IRF7105TRPBF Description
The fifth generation HEXFET from the international rectifier uses advanced processing technology to achieve the lowest possible on-resistance per silicon area. Combined with fast switching speed and rugged device characteristics, HEXFETPower MOSFET is well known, providing designers with an extremely efficient device for use in a variety of applications.SO-8 is improved by customizing lead frames to enhance thermal and multi-chip capabilities, making it an ideal choice for a variety of power applications. Through these improvements, multiple devices can be used in applications that significantly reduce circuit board space. The package is designed for vapor phase infrared or wave soldering technology. In typical PCB placement applications, it is possible to consume more than 0.8W.
IRF7105TRPBF Features
Advanced Process Technology
Ultra Low On-Resistance
Dual N and P Channel Mosfet
Surface Mount
Available in Tape &Reel
Dynamic dv/dt Rating
Fast Switching
Lead-Free
IRF7105TRPBF Applications
providing designers with an extremely efficient device for use in a variety of applications.
