FDG6306P Description
This P-channel 2.5V MOSFET is a rugged gate version of advanced PowerTritch technology. It is optimized for power management applications with a wide range of gate drive voltages (2.5V-12V).
FDG6306P Features
¨C0.6 A, ¨C20 V.
RDS(ON)= 420 m|? @ VGS = ¨C4.5 V
RDS(ON) = 630 m|? @ VGS = ¨C2.5 V
Low gate charge
High performance trench technology for extremelylow RDS(ON)
Compact industry standard SC70-6 surface mountpackage
FDG6306P Applications
This product is general usage and suitable for many different applications.
