BCX5110TA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 63 @ 150mA 2V.The collector emitter saturation voltage is -500mV, which allows for maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 50mA, 500mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.As you can see, the part has a transition frequency of 150MHz.Input voltage breakdown is available at 45V volts.In extreme cases, the collector current can be as low as 1A volts.
BCX5110TA Features
the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
BCX5110TA Applications
There are a lot of Diodes Incorporated BCX5110TA applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
