NSV20200LT1G Overview
In this device, the DC current gain is 250 @ 500mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).100MHz is present in the transition frequency.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.
NSV20200LT1G Features
the DC current gain for this device is 250 @ 500mA 2V
the vce saturation(Max) is 180mV @ 200mA, 2A
a transition frequency of 100MHz
NSV20200LT1G Applications
There are a lot of ON Semiconductor NSV20200LT1G applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
