MSB92WT1G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 1mA 10V DC current gain.As it features a collector emitter saturation voltage of -500mV, it allows for maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 2mA, 20mA.The base voltage of the emitter can be kept at 5V to achieve high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -500mA current rating.In this part, there is a transition frequency of 50MHz.An input voltage of 300V volts is the breakdown voltage.A maximum collector current of 500mA volts can be achieved.
MSB92WT1G Features
the DC current gain for this device is 120 @ 1mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA
a transition frequency of 50MHz
MSB92WT1G Applications
There are a lot of ON Semiconductor MSB92WT1G applications of single BJT transistors.
- Interface
- Inverter
- Muting
- Driver
