2DD2678-13 Overview
In this device, the DC current gain is 270 @ 500mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 250mV.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.In this part, there is a transition frequency of 170MHz.As a result, it can handle voltages as low as 12V volts.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.
2DD2678-13 Features
the DC current gain for this device is 270 @ 500mA 2V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 30mA, 1.5A
the emitter base voltage is kept at 6V
a transition frequency of 170MHz
2DD2678-13 Applications
There are a lot of Diodes Incorporated 2DD2678-13 applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
