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BD239B-S

BD239B-S

BD239B-S

Bourns Inc.

BD239B-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website

SOT-23

BD239B-S Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Operating Temperature-65°C~150°C TJ
PackagingTube
Published 1993
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
HTS Code8541.29.00.95
Max Power Dissipation30W
Base Part Number BD239
Pin Count3
Element ConfigurationSingle
Power - Max 2W
Transistor Type NPN
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 1A 4V
Current - Collector Cutoff (Max) 300μA
Vce Saturation (Max) @ Ib, Ic 700mV @ 200mA, 1A
Collector Emitter Breakdown Voltage80V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 2A
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:4888 items

BD239B-S Product Details

BD239B-S Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 15 @ 1A 4V DC current gain.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Continuous collector voltages of 2A should be maintained to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.During maximum operation, collector current can be as low as 2A volts.

BD239B-S Features


the DC current gain for this device is 15 @ 1A 4V
the vce saturation(Max) is 700mV @ 200mA, 1A
the emitter base voltage is kept at 5V

BD239B-S Applications


There are a lot of Bourns Inc. BD239B-S applications of single BJT transistors.

  • Muting
  • Inverter
  • Driver
  • Interface

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