MPS2369RLRAG Overview
DC current gain in this device equals 40 @ 10mA 1V, which is the ratio of the base current to the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 250mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 1mA, 10mA.Emitter base voltages of 4.5V can achieve high levels of efficiency.This device has a current rating of 200mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A transition frequency of 500MHz is present in the part.In extreme cases, the collector current can be as low as 200mA volts.
MPS2369RLRAG Features
the DC current gain for this device is 40 @ 10mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 1mA, 10mA
the emitter base voltage is kept at 4.5V
the current rating of this device is 200mA
a transition frequency of 500MHz
MPS2369RLRAG Applications
There are a lot of ON Semiconductor MPS2369RLRAG applications of single BJT transistors.
Driver
Inverter
Interface
Muting
