PZTA14E6327HTSA1 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20000 @ 100mA 5V.The collector emitter saturation voltage is 1.5V, which allows for maximum design flexibility.A VCE saturation (Max) of 1.5V @ 100μA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 10V.Parts of this part have transition frequencies of 125MHz.A maximum collector current of 300mA volts is possible.
PZTA14E6327HTSA1 Features
the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
a transition frequency of 125MHz
PZTA14E6327HTSA1 Applications
There are a lot of Infineon Technologies PZTA14E6327HTSA1 applications of single BJT transistors.
- Interface
- Driver
- Inverter
- Muting