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2N4058 PBFREE

2N4058 PBFREE

2N4058 PBFREE

Central Semiconductor Corp

2N4058 PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website

SOT-23

2N4058 PBFREE Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 6 Weeks
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Operating Temperature-65°C~150°C TJ
PackagingBulk
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) Not Applicable
Terminal Finish MATTE TIN OVER NICKEL
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 625mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100μA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 700mV @ 500μA, 10mA
Voltage - Collector Emitter Breakdown (Max) 30V
Current - Collector (Ic) (Max) 200mA
RoHS StatusROHS3 Compliant
In-Stock:26386 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.752000$0.752
10$0.709434$7.09434
100$0.669277$66.9277
500$0.631394$315.697
1000$0.595654$595.654

2N4058 PBFREE Product Details

2N4058 PBFREE Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 100μA 5V DC current gain.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Detection of Collector Emitter Breakdown at 30V maximal voltage is present.

2N4058 PBFREE Features


the DC current gain for this device is 100 @ 100μA 5V
the vce saturation(Max) is 700mV @ 500μA, 10mA

2N4058 PBFREE Applications


There are a lot of Central Semiconductor Corp 2N4058 PBFREE applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

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