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2N1613L

2N1613L

2N1613L

Microsemi Corporation

Trans GP BJT NPN 30V 0.5A 3-Pin TO-5

SOT-23

2N1613L Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Mount Through Hole
Package / Case TO-5
Number of Pins 3
PackagingBulk
Published 2007
JESD-609 Code e0
Part StatusActive
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN LEAD
Max Operating Temperature175°C
Min Operating Temperature -55°C
Subcategory Other Transistors
Max Power Dissipation800mW
Terminal Position BOTTOM
Terminal FormWIRE
Pin Count3
Number of Elements 1
Polarity NPN
Configuration SINGLE
Power Dissipation800mW
Case Connection COLLECTOR
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 500mA
Collector Base Voltage (VCBO) 75V
Emitter Base Voltage (VEBO) 7V
DC Current Gain-Min (hFE) 20
Radiation HardeningNo
RoHS StatusNon-RoHS Compliant
In-Stock:402 items

Pricing & Ordering

QuantityUnit PriceExt. Price
100$19.16150$1916.15

About 2N1613L

The 2N1613L from Microsemi Corporation is a high-performance microcontroller designed for a wide range of embedded applications. This component features Trans GP BJT NPN 30V 0.5A 3-Pin TO-5.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the 2N1613L, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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