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DXTP07100BFG-7

DXTP07100BFG-7

DXTP07100BFG-7

Diodes Incorporated

DXTP07100BFG-7 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

DXTP07100BFG-7 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 15 Weeks
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Series Automotive, AEC-Q101
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 900mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA 2V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 200mA, 2A
Voltage - Collector Emitter Breakdown (Max) 100V
Current - Collector (Ic) (Max) 2A
Frequency - Transition 140MHz
RoHS StatusROHS3 Compliant
In-Stock:11490 items

Pricing & Ordering

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DXTP07100BFG-7 Product Details

DXTP07100BFG-7 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 500mA 2V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The device exhibits a collector-emitter breakdown at 100V.

DXTP07100BFG-7 Features


the DC current gain for this device is 100 @ 500mA 2V
the vce saturation(Max) is 500mV @ 200mA, 2A

DXTP07100BFG-7 Applications


There are a lot of Diodes Incorporated DXTP07100BFG-7 applications of single BJT transistors.

  • Driver
  • Muting
  • Inverter
  • Interface

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