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NE5550979A-T1-A

NE5550979A-T1-A

NE5550979A-T1-A

CEL

FET RF 30V 900MHZ 79A-PKG

SOT-23

NE5550979A-T1-A Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Package / Case 79A
Number of Pins 4
PackagingTape & Reel (TR)
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature150°C
Min Operating Temperature -55°C
Voltage - Rated 30V
Max Power Dissipation25W
Current Rating3A
Frequency 900MHz
Base Part Number NE5550
Number of Elements 1
Current - Test 200mA
Transistor Type LDMOS
Continuous Drain Current (ID) 3A
Gate to Source Voltage (Vgs) 6V
Gain 22dB
Power - Output 38.6dBm
Voltage - Test 7.5V
Radiation HardeningNo
RoHS StatusRoHS Compliant
In-Stock:2720 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$11.373600$11.3736
10$10.729811$107.29811
100$10.122464$1012.2464
500$9.549494$4774.747
1000$9.008956$9008.956

NE5550979A-T1-A Product Details

The CEL Transistors - FETs, MOSFETs - RF NE5550979A-T1-A is a high-performance FET designed for RF applications. It features a 30V drain-source voltage rating and a 900MHz frequency rating, making it ideal for use in high-frequency applications. The 79A-PKG package provides excellent thermal and electrical performance, making it suitable for a wide range of applications. The device is designed to provide superior performance in terms of power handling, linearity, and efficiency. It is also designed to be highly reliable and durable, making it an ideal choice for long-term use. The CEL Transistors - FETs, MOSFETs - RF NE5550979A-T1-A is an excellent choice for those looking for a high-performance FET for RF applications.

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