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AFT31150N

AFT31150N

AFT31150N

NXP Semiconductors

AFT31150N datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP Semiconductors stock available on our website

SOT-23

AFT31150N Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
ECCN (US) EAR99
Channel Mode Enhancement
Number of Elements per Chip 1
Process Technology LDMOS
Maximum Drain Source Voltage (V) 65
Maximum Gate Source Voltage (V) 10
Maximum VSWR 10
Maximum Power Dissipation (mW) 741000
Output Power (W) 150(Typ)
Typical Power Gain (dB) 17
Maximum Frequency (MHz) 3100
Minimum Frequency (MHz) 2700
Typical Drain Efficiency (%) 50
Minimum Operating Temperature (°C) -40
Maximum Operating Temperature (°C) 150
Supplier Package OM-780 EP
Military No
Mounting Surface Mount
Package Height 3.86(Max)
Package Length 20.62(Max)
Package Width 10.01(Max)
PCB changed 3
PackagingTape and Reel
Part StatusActive
Type MOSFET
Pin Count3
Configuration Single
Channel Type N
Mode of OperationPulse
RoHS StatusRoHS Compliant
In-Stock:3080 items

About AFT31150N

The AFT31150N from NXP Semiconductors is a high-performance microcontroller designed for a wide range of embedded applications. This component features AFT31150N datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP Semiconductors stock available on our website.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the AFT31150N, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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