The Ampleon BLF574,112 is a RF FET LDMOS (laterally diffused metal oxide semiconductor) transistor with a 110V drain-source voltage and a 26.5dB gain. It is packaged in a SOT539A surface mount package.
Features:
• High gain of 26.5dB • High drain-source voltage of 110V • Low noise figure of 1.5dB • High power output of up to 50W • High efficiency of up to 70% • Low thermal resistance of 0.5°C/W • Low input and output capacitance • High frequency operation up to 4GHz
Applications:
The Ampleon BLF574,112 is suitable for a wide range of applications, including RF power amplifiers, cellular base stations, and wireless communication systems. It is also suitable for use in high power, high efficiency, and high frequency applications.
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