A2T07D160W04SR3 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available on our website
SOT-23
A2T07D160W04SR3 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Package / Case
NI-780S-4
Packaging
Tape & Reel (TR)
Published
2006
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
Not Applicable
ECCN Code
EAR99
Voltage - Rated
70V
HTS Code
8541.29.00.75
Peak Reflow Temperature (Cel)
260
Frequency
803MHz
[email protected] Reflow Temperature-Max (s)
40
Current - Test
450mA
Transistor Type
LDMOS (Dual)
Gain
21.5dB
Power - Output
30W
Voltage - Test
28V
RoHS Status
ROHS3 Compliant
In-Stock:101 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
250
$101.51320
$25378.3
A2T07D160W04SR3 Product Details
A2T07D160W04SR3 Description
For cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 716 to 960 MHz, this 30 W symmetrical Doherty RF power LDMOS transistor is created. This product can be applied in a variety of circumstances and is meant for general use.
A2T07D160W04SR3 Features
Wide Instantaneous Bandwidth Applications Designed
Improved Class C Operation with a Wider Negative Gate—Source Voltage Range
Capable of Withstanding Broadband Operating Conditions and Extremely High Output VSWR
For use with Digital Predistortion Error Correction Systems
in reel-to-reel. 250 Units, 32 mm Tape Width, 13-inch Reel; R3 Suffix.
A2T07D160W04SR3 Applications
Switching applications
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