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BLP10H605, 531

BLP10H605, 531

BLP10H605, 531

Ampleon

BLP10H605, 531 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from Ampleon stock available on our website

SOT-23

BLP10H605, 531 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
ECCN (US) EAR99
Channel Mode Enhancement
Number of Elements per Chip 2
Process Technology LDMOS
Maximum Drain Source Voltage (V) 104
Maximum Gate Source Voltage (V) 11
Maximum Gate Threshold Voltage (V) 1.8(Typ)
Maximum VSWR 35
Maximum Gate Source Leakage Current (nA) 60
Maximum IDSS (uA) 0.6
Output Power (W) 5
Typical Power Gain (dB) 22.4
Maximum Frequency (MHz) 1400
Typical Drain Efficiency (%) 59.6(Max)
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 150
Supplier Package HVSON EP
Military No
Mounting Surface Mount
Package Height 0.82
Package Length 6
Package Width 5
PCB changed 12
PackagingTape and Reel
Part StatusActive
Pin Count12
Configuration Dual Common Source
Channel Type N
Mode of OperationCW
RoHS StatusRoHS Compliant
In-Stock:4251 items

About BLP10H605, 531

The BLP10H605, 531 from Ampleon is a high-performance microcontroller designed for a wide range of embedded applications. This component features BLP10H605, 531 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from Ampleon stock available on our website.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the BLP10H605, 531, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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