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BLC6G22LS-75,112

BLC6G22LS-75,112

BLC6G22LS-75,112

NXP USA Inc.

Transistors RF MOSFET Power Single 65V 18A 0.15Ohms

SOT-23

BLC6G22LS-75,112 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Package / Case SOT896B
Surface MountYES
PackagingTube
Published 2012
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated 65V
Subcategory FET General Purpose Power
Current Rating (Amps) 18A
Frequency 2.11GHz~2.17GHz
Operating Temperature (Max) 150°C
Configuration Single
Operating ModeENHANCEMENT MODE
Current - Test 690mA
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS
Gain 18.5dB
Drain Current-Max (Abs) (ID) 18A
Power - Output 17W
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 28V
RoHS StatusROHS3 Compliant
In-Stock:1864 items

About BLC6G22LS-75,112

The BLC6G22LS-75,112 from NXP USA Inc. is a high-performance microcontroller designed for a wide range of embedded applications. This component features Transistors RF MOSFET Power Single 65V 18A 0.15Ohms.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the BLC6G22LS-75,112, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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