BUK768R1-100E

new-10%

Manufacturer part number:BUK768R1-100E

Manufacturer:NXP SEMICONDUCTORS

Description:BUK768R1-100E datasheet pdf and Unclassified product details from NXP SEMICONDUCTORS stock available on our website

Case Package:SOT-23

Datasheet:BUK768R1-100E Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Surface Mount	YES
Number of Terminals	2
Transistor Element Material	SILICON
JESD-609 Code	e3
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Terminal Finish	TIN
Additional Feature	AVALANCHE RATED
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Reference Standard	AEC-Q101; IEC-60134
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Transistor Application	SWITCHING
Polarity/Channel Type	N-CHANNEL
Drain Current-Max (Abs) (ID)	100A
Drain-source On Resistance-Max	0.0081Ohm
Pulsed Drain Current-Max (IDM)	439A
DS Breakdown Voltage-Min	100V
Avalanche Energy Rating (Eas)	219 mJ
FET Technology	METAL-OXIDE SEMICONDUCTOR
RoHS Status	RoHS Compliant