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BUJ105A,127

BUJ105A,127

BUJ105A,127

WeEn Semiconductors

BUJ105A,127 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from WeEn Semiconductors stock available on our website

SOT-23

BUJ105A,127 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3
Surface MountNO
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTube
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Position SINGLE
Reference Standard IEC-134
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 80W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 13 @ 500mA 5V
Current - Collector Cutoff (Max) 100μA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 1V @ 800mA, 4A
Voltage - Collector Emitter Breakdown (Max) 400V
Current - Collector (Ic) (Max) 8A
RoHS StatusRoHS Compliant
In-Stock:4539 items

Pricing & Ordering

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BUJ105A,127 Product Details

BUJ105A,127 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 13 @ 500mA 5V DC current gain.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 800mA, 4A.The device exhibits a collector-emitter breakdown at 400V.

BUJ105A,127 Features


the DC current gain for this device is 13 @ 500mA 5V
the vce saturation(Max) is 1V @ 800mA, 4A

BUJ105A,127 Applications


There are a lot of WeEn Semiconductors BUJ105A,127 applications of single BJT transistors.

  • Muting
  • Driver
  • Inverter
  • Interface

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