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MJE700G

MJE700G

MJE700G

ON Semiconductor

MJE700G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MJE700G Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 14 hours ago)
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Surface MountNO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingBulk
Published 2001
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional FeatureBUILT IN BIAS RESISTOR
Subcategory Other Transistors
Voltage - Rated DC -60V
Max Power Dissipation40W
Peak Reflow Temperature (Cel) 260
Current Rating-4A
[email protected] Reflow Temperature-Max (s) 40
Base Part Number MJE700
Pin Count3
Number of Elements 1
Polarity PNP
Element ConfigurationSingle
Power Dissipation40W
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Transistor Type PNP - Darlington
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 1.5A 3V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 2.5V @ 30mA, 1.5A
Collector Emitter Breakdown Voltage60V
Transition Frequency 1MHz
Collector Emitter Saturation Voltage2.5V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
hFE Min 100
Height 11.0998mm
Length 7.7978mm
Width 2.9972mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:2247 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.63000$0.63
10$0.54600$5.46
100$0.41090$41.09
500$0.32544$162.72

MJE700G Product Details

MJE700G Overview


DC current gain in this device equals 750 @ 1.5A 3V, which is the ratio of the base current to the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2.5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2.5V @ 30mA, 1.5A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -4A.As a result, the part has a transition frequency of 1MHz.Collector current can be as low as 4A volts at its maximum.

MJE700G Features


the DC current gain for this device is 750 @ 1.5A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 30mA, 1.5A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
a transition frequency of 1MHz

MJE700G Applications


There are a lot of ON Semiconductor MJE700G applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

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