Name: SUM110P06-08L-E3
Brand: Vishay Siliconix
SKU: SUM110P06-08L-E3
Price: 4.66000 USD
Availability: InStock

new-10%

SUM110P06-08L-E3

Manufacturer part number:SUM110P06-08L-E3

Manufacturer:Vishay Siliconix

Description:SUM110P06-08L-E3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Vishay Siliconix stock available on our website

Case Package:SOT-23

Datasheet:SUM110P06-08L-E3 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Supplier Device Package	TO-263 (D2Pak)
Weight	1.437803g
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	TrenchFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	8MOhm
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	3.75W Ta 272W Tc
Element Configuration	Single
Power Dissipation	3.75W
Turn On Delay Time	20 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	9200pF @ 25V
Current - Continuous Drain (Id) @ 25°C	110A Tc
Gate Charge (Qg) (Max) @ Vgs	240nC @ 10V
Rise Time	190ns
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	300 ns
Turn-Off Delay Time	140 ns
Continuous Drain Current (ID)	-110A
Threshold Voltage	-1V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	-60V
Input Capacitance	9.2nF
Max Junction Temperature (Tj)	175°C
Drain to Source Resistance	6.5mOhm
Rds On Max	8 mΩ
Height	5.08mm
Length	10.41mm
Width	9.65mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

SUM110P06-08L-E3 Product Details

SUM110P06-08L-E3 Description

SUM110P06-08L-E3 is a 60-V P-Channel MOSFET. A P-channel MOSFET uses hole flow as the charge carrier, which has less mobility than the electron flow used in N-channel MOSFETs. In functional terms, the main difference is that P-channel MOSFETs require a negative voltage from the gate to the source (VGS) to turn on (as opposed to an N-channel MOSFET, which requires a positive VGS voltage). This makes P-channel MOSFETs the ideal choice for high-side switches. The simplicity of the design is beneficial for low-voltage drive applications and non-isolated POLs, where space is limited.