AUIRFP4568 Description
Designed for automotive applications, this HEXFET power MOSFET uses the latest technology to achieve extremely low on-resistance per silicon area. Other features of the design include a 175 °C junction operating temperature, fast switching speed and an improved repeated avalanche rating. The combination of these features makes the design an extremely efficient and reliable device for automotive and a variety of other applications.
AUIRFP4568 Features
· Advanced Planar Technology
· Ultra Low On-Resistance
· Dynamic dv/dt Rating
· 175°C Operating Temperature
· Fast Switching
· Repetitive Avalanche Allowed up to Tjmax
· Lead-Free, RoHS Compliant
· Automotive Qualified *
AUIRFP4568 Applications
automotive Applications
