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SQJB90EP-T1_GE3

SQJB90EP-T1_GE3

SQJB90EP-T1_GE3

Vishay Siliconix

MOSFET 2 N-CH 80V POWERPAK SO8

SOT-23

SQJB90EP-T1_GE3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 14 Weeks
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8 Dual
Supplier Device Package PowerPAK® SO-8 Dual
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Series Automotive, AEC-Q101, TrenchFET®
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 48W
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 21.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Drain to Source Voltage (Vdss) 80V
FET Feature Standard
RoHS StatusROHS3 Compliant
In-Stock:4222 items

Pricing & Ordering

QuantityUnit PriceExt. Price

About SQJB90EP-T1_GE3

The SQJB90EP-T1_GE3 from Vishay Siliconix is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET 2 N-CH 80V POWERPAK SO8.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the SQJB90EP-T1_GE3, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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