SQ3427EV-T1_GE3

Name: SQ3427EV-T1_GE3
Brand: Vishay Siliconix
SKU: SQ3427EV-T1_GE3
Price: 0.72000 USD
Availability: InStock

new-10%

Manufacturer part number:SQ3427EV-T1_GE3

Manufacturer:Vishay Siliconix

Description:MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 95m Ω @ 4.5A, 10V ±20V 1000pF @ 30V 32nC @ 10V 60V SOT-23-6 Thin, TSOT-23-6

Case Package:SOT-23

Datasheet:SQ3427EV-T1_GE3 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Series	Automotive, AEC-Q101, TrenchFET®
Published	2017
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PDSO-G6
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	5W Tc
Operating Mode	ENHANCEMENT MODE
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	95m Ω @ 4.5A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1000pF @ 30V
Current - Continuous Drain (Id) @ 25°C	5.3A Tc
Gate Charge (Qg) (Max) @ Vgs	32nC @ 10V
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
JEDEC-95 Code	MO-193AA
Drain Current-Max (Abs) (ID)	5.3A
Drain-source On Resistance-Max	0.095Ohm
DS Breakdown Voltage-Min	60V
Feedback Cap-Max (Crss)	80 pF
RoHS Status	ROHS3 Compliant

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