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FDB035N10A

FDB035N10A

FDB035N10A

ON Semiconductor

FDB035N10A datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FDB035N10A Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Weight 1.31247g
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Published 2013
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 3.5MOhm
Terminal Finish Tin (Sn)
Additional FeatureULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 333W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation333W
Case Connection DRAIN
Turn On Delay Time22 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.5m Ω @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 7295pF @ 25V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 116nC @ 10V
Rise Time54ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 11 ns
Turn-Off Delay Time 37 ns
Continuous Drain Current (ID) 214A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 704A
Avalanche Energy Rating (Eas) 558 mJ
Height 4.83mm
Length 10.67mm
Width 9.65mm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1261 items

Pricing & Ordering

QuantityUnit PriceExt. Price
800$3.13200$2505.6

FDB035N10A Product Details

FDB035N10A Description


The FDB035N10A N-Channel MOSFET from ON Semiconductor is manufactured utilizing an innovative PowerTrench? process that has been optimized to minimize on-state resistance while preserving exceptional switching performance.



FDB035N10A Features


  • Fast Switching Speed

  • Low Gate Charge, QG = 89nC ( Typ.)

  • High-Performance Trench Technology for Extremely Low RDS(on)

  • RDS(on) = 3.0m? ( Typ.)@ VGS = 10V, ID = 75A

  • High Power and Current Handling Capability

  • RoHS Compliant



FDB035N10A Applications


  • AC-DC Merchant Power Supply - Desktop PC

  • Uninterruptible Power Supply

  • AC-DC Merchant Power Supply - Servers & Workstations

  • Electric Bike


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