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SIZF920DT-T1-GE3

SIZF920DT-T1-GE3

SIZF920DT-T1-GE3

Vishay Siliconix

Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode

SOT-23

SIZF920DT-T1-GE3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 14 Weeks
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Supplier Device Package 8-PowerPair® (6x5)
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Series TrenchFET® Gen IV
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 3.9W Ta 28W Tc 4.5W Ta 74W Tc
FET Type 2 N-Channel (Dual), Schottky
Rds On (Max) @ Id, Vgs 3.07mOhm @ 10A, 10V, 1.05mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250μA, 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 15V 5230pF @ 15V
Current - Continuous Drain (Id) @ 25°C 28A Ta 76A Tc 49A Ta 197A Tc
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V, 125nC @ 10V
Drain to Source Voltage (Vdss) 30V
FET Feature Standard
RoHS StatusROHS3 Compliant
In-Stock:3945 items

Pricing & Ordering

QuantityUnit PriceExt. Price

About SIZF920DT-T1-GE3

The SIZF920DT-T1-GE3 from Vishay Siliconix is a high-performance microcontroller designed for a wide range of embedded applications. This component features Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the SIZF920DT-T1-GE3, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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