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EPC2100ENGRT

EPC2100ENGRT

EPC2100ENGRT

EPC

GANFET 2 N-CH 30V 9.5A/38A DIE

SOT-23

EPC2100ENGRT Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 16 Weeks
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die
Operating Temperature-40°C~150°C TJ
PackagingTape & Reel (TR)
Series eGaN®
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
FET Type 2 N-Channel (Half Bridge)
Rds On (Max) @ Id, Vgs 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V
Vgs(th) (Max) @ Id 2.5V @ 4mA, 2.5V @ 16mA
Input Capacitance (Ciss) (Max) @ Vds 475pF @ 15V 1960pF @ 15V
Current - Continuous Drain (Id) @ 25°C 10A Ta 40A Ta
Gate Charge (Qg) (Max) @ Vgs 4.9nC @ 15V, 19nC @ 15V
Drain to Source Voltage (Vdss) 30V
FET Feature GaNFET (Gallium Nitride)
RoHS StatusROHS3 Compliant
In-Stock:1366 items

Pricing & Ordering

QuantityUnit PriceExt. Price
500$4.71200$2356

About EPC2100ENGRT

The EPC2100ENGRT from EPC is a high-performance microcontroller designed for a wide range of embedded applications. This component features GANFET 2 N-CH 30V 9.5A/38A DIE.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the EPC2100ENGRT, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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