FDMC8200 Description
The device includes two dedicated N-channel MOSFET in a dual Power33 (3 Mm X 3 Mm MLP) package. The switch nodes are connected internally for easy placement and wiring of synchronous step-down converters. Control MOSFET (Q1) and synchronous MOSFET (Q2) are designed to provide optimal power efficiency.
FDMC8200 Features
Q1: N-Channel
Max. RDS(on) = 20 mΩ at VGS = 10 V, ID = 6A
Max. RDS(on) = 32 mΩ at VGS = 4.5 V, ID = 5A
Q2: N-Channel
Max. RDS(on) = 9.5 mΩ at VGS = 10 V, ID = 9A
Max. RDS(on) = 13.5 mΩ at VGS = 4.5 V, ID = 7A
RoHS Compliant
FDMC8200 Applications
This product is general usage and suitable for many different applications.
