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SIRB40DP-T1-GE3

SIRB40DP-T1-GE3

SIRB40DP-T1-GE3

Vishay Siliconix

MOSFET 2 N-CH 40V POWERPAK SO8

SOT-23

SIRB40DP-T1-GE3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 14 Weeks
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8 Dual
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Series TrenchFET®
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 46.2W
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 3.25m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4290pF @ 20V
Current - Continuous Drain (Id) @ 25°C 40A Tc
Gate Charge (Qg) (Max) @ Vgs 45nC @ 4.5V
Drain to Source Voltage (Vdss) 40V
FET Feature Standard
RoHS StatusROHS3 Compliant
In-Stock:4382 items

Pricing & Ordering

QuantityUnit PriceExt. Price

About SIRB40DP-T1-GE3

The SIRB40DP-T1-GE3 from Vishay Siliconix is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET 2 N-CH 40V POWERPAK SO8.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the SIRB40DP-T1-GE3, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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