FDMD8280 Description
This device includes two 80V N-Channel MOSFETs in a dual Power (3.3 mm X 5 mm) package. HS source and LS Drain internally connected for half/full bridge, low source inductance package, low rDS(on) / Qg FOM silicon.
FDMD8280 Features
Max rDS(on) = 8.2 m|? at VGS = 10 V, ID = 11 A
Max rDS(on) = 11 m|? at VGS = 8 V, ID = 9.5 A
Ideal for flexible layout in primary side of bridge topology
Termination is Lead-free and RoHS Compliant
100% UIL tested
Kelvin High Side MOSFET drive pin-out capability
FDMD8280 Applications
This product is general usage and suitable for many different applications.
