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SIHP14N60E-GE3

SIHP14N60E-GE3

SIHP14N60E-GE3

Vishay Siliconix

MOSFET (Metal Oxide) N-Channel Tube 309mOhm @ 7A, 10V ±30V 1205pF @ 100V 64nC @ 10V 600V TO-220-3

SOT-23

SIHP14N60E-GE3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 14 Weeks
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220AB
Operating Temperature-55°C~150°C TJ
PackagingTube
Series E
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 147W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 309mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1205pF @ 100V
Current - Continuous Drain (Id) @ 25°C 13A Tc
Gate Charge (Qg) (Max) @ Vgs 64nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
RoHS StatusROHS3 Compliant
In-Stock:3489 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.974000$1.974
10$1.862264$18.62264
100$1.756853$175.6853
500$1.657408$828.704
1000$1.563593$1563.593

SIHP14N60E-GE3 Product Details

SIHP14N60E-GE3 Overview


A device's maximal input capacitance is 1205pF @ 100V, which is defined as the capacitance between its input terminals with either input grounded.This transistor requires a 600V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

SIHP14N60E-GE3 Features


a 600V drain to source voltage (Vdss)


SIHP14N60E-GE3 Applications


There are a lot of Vishay Siliconix
SIHP14N60E-GE3 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples

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