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IPD30N03S4L09ATMA1

IPD30N03S4L09ATMA1

IPD30N03S4L09ATMA1

Infineon Technologies

MOSFET N-CH 30V 30A TO252-3

SOT-23

IPD30N03S4L09ATMA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Published 2011
Series OptiMOS™
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal FormGULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Reference Standard AEC-Q101
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 42W Tc
Operating ModeENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time3 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 9m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 13μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1520pF @ 15V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Rise Time1ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 5 ns
Turn-Off Delay Time 12 ns
Continuous Drain Current (ID) 30A
Gate to Source Voltage (Vgs) 16V
Max Dual Supply Voltage30V
Drain-source On Resistance-Max 0.009Ohm
Pulsed Drain Current-Max (IDM) 120A
Avalanche Energy Rating (Eas) 28 mJ
RoHS StatusROHS3 Compliant
Lead Free Contains Lead
In-Stock:6811 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$6.111920$6.11192
10$5.765962$57.65962
100$5.439587$543.9587
500$5.131686$2565.843
1000$4.841213$4841.213

About IPD30N03S4L09ATMA1

The IPD30N03S4L09ATMA1 from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 30V 30A TO252-3.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IPD30N03S4L09ATMA1, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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