SI7850DP-T1-E3 Overview
The drain current is the maximum continuous current the device can conduct, and this device has 6.2A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 60V, and this device has a drainage-to-source breakdown voltage of 60VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 25 ns.Peak drain current is 40A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 3V, which means that it will not activate any of its functions when its threshold voltage reaches 3V.Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
SI7850DP-T1-E3 Features
a continuous drain current (ID) of 6.2A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 25 ns
based on its rated peak drain current 40A.
a threshold voltage of 3V
SI7850DP-T1-E3 Applications
There are a lot of Vishay Siliconix
SI7850DP-T1-E3 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
