FQPF3N90 Description
These N-channel enhanced mode power field effect transistors are programmed using rairchid's proprietary planar stripe DMOS technology. This advanced technology is tailor-made to minimize on-resistance and provides excellent switching performance. And withstand high energy pulses in avalanche and rectifier modes. These devices are very suitable for high efficiency switching power supplies.
FQPF3N90 Applications
high efficiency switching power supplies
FQPF3N90 Features
·2.1A,900VRDS(on=4.25Ω@VGs=10V
Low gate charge(typical 20nC)
·Low Crss(typical 8.0 pF)
.Fast switching
100% avalanche tested
·Improved dvidt capability
