Name: SI7489DP-T1-GE3
Brand: Vishay Siliconix
SKU: SI7489DP-T1-GE3
Price: 2.77000 USD
Availability: InStock

new-10%

SI7489DP-T1-GE3

Manufacturer part number:SI7489DP-T1-GE3

Manufacturer:Vishay Siliconix

Description:SI7489DP-T1-GE3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Vishay Siliconix stock available on our website

Case Package:SOT-23

Datasheet:SI7489DP-T1-GE3 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8
Number of Pins	8
Weight	506.605978mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2015
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Pin Count	8
JESD-30 Code	R-PDSO-F5
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	5.2W Ta 83W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	5.2W
Case Connection	DRAIN
Turn On Delay Time	15 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	41m Ω @ 7.8A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4600pF @ 50V
Current - Continuous Drain (Id) @ 25°C	28A Tc
Gate Charge (Qg) (Max) @ Vgs	160nC @ 10V
Rise Time	160ns
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	100 ns
Turn-Off Delay Time	110 ns
Continuous Drain Current (ID)	-28A
Threshold Voltage	-3V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	-100V
Pulsed Drain Current-Max (IDM)	40A
Max Junction Temperature (Tj)	150°C
Nominal Vgs	-3 V
Turn On Time-Max (ton)	55ns
Height	1.12mm
Length	4.9mm
Width	5.89mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

SI7489DP-T1-GE3 Product Details

SI7489DP-T1-GE3 Description

The SI7489DP-T1-GE3 is a P-Channel 100-V (D-S) MOSFET. The most typical method for creating the type of field-effect transistor (FET) known as a metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is by carefully controlling the oxidation of silicon. The conductivity of the device is controlled by the voltage of an insulated gate. Electronic signals can be amplified or switched using this property of conductivity that changes with the amount of applied voltage. A MOSFET is generally always referred to as a metal-insulator-semiconductor field-effect transistor (MISFET). An insulated-gate field-effect transistor (IGFET) is another alternative term.