Name: FDB52N20TM
Brand: ON Semiconductor
SKU: FDB52N20TM
Price: 2.74000 USD
Availability: InStock

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FDB52N20TM

Manufacturer part number:FDB52N20TM

Manufacturer:ON Semiconductor

Description:FDB52N20TM datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDB52N20TM Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Lifecycle Status	ACTIVE (Last Updated: 22 hours ago)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Weight	1.31247g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2005
Series	UniFET™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	49mOhm
Subcategory	FET General Purpose Power
Voltage - Rated DC	200V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Current Rating	52A
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	357W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	357W
Case Connection	DRAIN
Turn On Delay Time	53 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	49m Ω @ 26A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2900pF @ 25V
Current - Continuous Drain (Id) @ 25°C	52A Tc
Gate Charge (Qg) (Max) @ Vgs	63nC @ 10V
Rise Time	160ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	150 ns
Turn-Off Delay Time	48 ns
Continuous Drain Current (ID)	52A
Threshold Voltage	5V
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	200V
Pulsed Drain Current-Max (IDM)	208A
Avalanche Energy Rating (Eas)	2520 mJ
Max Junction Temperature (Tj)	150°C
Nominal Vgs	5 V
Height	5.08mm
Length	9.98mm
Width	10.16mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

FDB52N20TM Product Details

FDB52N20TM Description

UniFETM MOSFET FDB52N20TM is Fairchild Semiconductor's high voltage MOSFET FDB52N20TMseries based on planar stripe and DMOS technology. The MOSFET is tailor-made to reduce on-resistance to provide better switching performance and higher avalanche energy intensity. The device family is suitable for switching power supply converter applications such as power factor correction (PFC), flat panel display (FPD), TV, PowerATX and electronic light bulbs.