Welcome to Hotenda.com Online Store!

logo
userjoin
Home

SI7431DP-T1-E3

SI7431DP-T1-E3

SI7431DP-T1-E3

Vishay Siliconix

MOSFET P-CH 200V 2.2A PPAK SO-8

SOT-23

SI7431DP-T1-E3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Number of Pins 8
Weight 506.605978mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2007
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 174mOhm
Terminal Finish Matte Tin (Sn)
Additional FeatureULTRA-LOW RESISTANCE
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormC BEND
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Pin Count8
JESD-30 Code R-XDSO-C5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.9W Ta
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation5.4W
Case Connection DRAIN
Turn On Delay Time23 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 174m Ω @ 3.8A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 2.2A Ta
Gate Charge (Qg) (Max) @ Vgs 135nC @ 10V
Rise Time49ns
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 49 ns
Turn-Off Delay Time 110 ns
Continuous Drain Current (ID) -3.8A
Threshold Voltage -4V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 2.2A
Drain to Source Breakdown Voltage -200V
Pulsed Drain Current-Max (IDM) 30A
Avalanche Energy Rating (Eas) 45 mJ
Max Junction Temperature (Tj) 150°C
Nominal Vgs -4 V
Height 1.12mm
Length 4.9mm
Width 5.89mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1995 items

Pricing & Ordering

QuantityUnit PriceExt. Price

About SI7431DP-T1-E3

The SI7431DP-T1-E3 from Vishay Siliconix is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET P-CH 200V 2.2A PPAK SO-8.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the SI7431DP-T1-E3, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

Get Subscriber

Enter Your Email Address, Get the Latest News