SI7421DN-T1-GE3 Overview
In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -30V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -30V.There is no drain current on this device since the maximum continuous current it can conduct is 6.4A.As a result of its turn-off delay time, which is 57 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 30A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 10 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is -3V.The transistor must receive a 30V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
SI7421DN-T1-GE3 Features
a continuous drain current (ID) of -9.8A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 57 ns
based on its rated peak drain current 30A.
a threshold voltage of -3V
a 30V drain to source voltage (Vdss)
SI7421DN-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI7421DN-T1-GE3 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
