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IXTP8N70X2M

IXTP8N70X2M

IXTP8N70X2M

IXYS

MOSFET N-CHANNEL 700V 4A TO220

SOT-23

IXTP8N70X2M Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 15 Weeks
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack, Isolated Tab
Operating Temperature-55°C~150°C TJ
PackagingTube
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 32W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 550m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 800pF @ 10V
Current - Continuous Drain (Id) @ 25°C 4A Tc
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Drain to Source Voltage (Vdss) 700V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
RoHS StatusROHS3 Compliant
In-Stock:2464 items

Pricing & Ordering

QuantityUnit PriceExt. Price
50$2.05000$102.5

About IXTP8N70X2M

The IXTP8N70X2M from IXYS is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CHANNEL 700V 4A TO220.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IXTP8N70X2M, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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