SI7288DP-T1-GE3

SI7288DP-T1-GE3 Description

A P-channel MOSFET transistor made by Vishay Siliconix, model number SI7288DP-T1-GE3, is intended for use in switching and power management applications. This MOSFET is perfect for use in high-efficiency power supplies and motor control circuits due to its low on-resistance and quick switching speed. Moreover, it features a low gate threshold voltage, allowing logic-level inputs to drive it. With its small PowerPAK SO-8 package and high power dissipation, the SI7288DP-T1-GE3 is straightforward to mount. It is made to work with a constant drain current of -4.2A and a maximum voltage of -30V.

SI7288DP-T1-GE3 Features

• P-channel MOSFET transistor

• RoHS-compliant and halogen-free

• Continuous drain current of -4.2A at 25°C

• Low on-resistance of 12 mOhm at VGS = -10V

• Low gate threshold voltage of -2.5V maximum

• Designed to operate at a maximum voltage of -30V

• Fast switching speed with a total gate charge of 9.5nC

• High power dissipation with a thermal resistance of 20°C/W

• Compact PowerPAK SO-8 package with a footprint of 2.9 mm x 2.8 mm

• Suitable for use in power management and switching applications, including high-efficiency power supplies and motor control circuits.

SI7288DP-T1-GE3 Applications

• Solar power inverters.

• LED lighting control circuits.

• Power supplies for medical devices.

• Power supplies for data storage devices.

• Power management in consumer electronics.

• Power distribution in telecom and networking equipment.

• Motor control circuits in automotive and industrial applications.

• Power management in DC-DC converters and voltage regulators.

• Low-side switching applications in high-frequency DC-DC converters.

• Power switching in battery-powered devices, such as smartphones and tablets.