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SI4010DY-T1-GE3

SI4010DY-T1-GE3

SI4010DY-T1-GE3

Vishay Siliconix

MOSFET N-Channel 30V

SOT-23

SI4010DY-T1-GE3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 27 Weeks
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Supplier Device Package 8-SO
Operating Temperature-55°C~150°C TA
PackagingTape & Reel (TR)
Series TrenchFET®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 3.4mOhm
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 6W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.4mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3595pF @ 15V
Current - Continuous Drain (Id) @ 25°C 31.3A Tc
Gate Charge (Qg) (Max) @ Vgs 77nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) +20V, -16V
RoHS StatusROHS3 Compliant
In-Stock:3281 items

Pricing & Ordering

QuantityUnit PriceExt. Price

About SI4010DY-T1-GE3

The SI4010DY-T1-GE3 from Vishay Siliconix is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-Channel 30V.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the SI4010DY-T1-GE3, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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