Name: IRLL3303TRPBF
Brand: Infineon Technologies
SKU: IRLL3303TRPBF
Availability: InStock

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IRLL3303TRPBF

Manufacturer part number:IRLL3303TRPBF

Manufacturer:Infineon Technologies

Description:IRLL3303TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRLL3303TRPBF Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	1999
Series	HEXFET®
JESD-609 Code	e3
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Resistance	31mOhm
Additional Feature	LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY
Subcategory	FET General Purpose Power
Voltage - Rated DC	30V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	4.6A
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PDSO-G4
Number of Elements	1
Power Dissipation-Max	1W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.1W
Case Connection	DRAIN
Turn On Delay Time	7.2 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	31m Ω @ 4.6A, 10V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	840pF @ 25V
Current - Continuous Drain (Id) @ 25°C	4.6A Ta
Gate Charge (Qg) (Max) @ Vgs	50nC @ 10V
Rise Time	22ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±16V
Fall Time (Typ)	28 ns
Turn-Off Delay Time	33 ns
Continuous Drain Current (ID)	4.6A
Threshold Voltage	1V
Gate to Source Voltage (Vgs)	16V
Drain Current-Max (Abs) (ID)	6.5A
Drain to Source Breakdown Voltage	30V
Dual Supply Voltage	30V
Recovery Time	98 ns
Nominal Vgs	1 V
Height	1.8mm
Length	6.6802mm
Width	3.7mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead, Lead Free

IRLL3303TRPBF Product Details

IRLL3303TRPBF Description

The IRLL3303TRPBF is a HEXFET? single N-channel Power MOSFET utilizing advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design provides an extremely efficient and reliable operation for use in a wide variety of applications. The IRLL3303TRPBF is designed for surface-mount using vapor phase, infrared, or wave soldering techniques.