Name: SI2371EDS-T1-GE3
Brand: Vishay Siliconix
SKU: SI2371EDS-T1-GE3
Price: 0.45000 USD
Availability: InStock

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SI2371EDS-T1-GE3

Manufacturer part number:SI2371EDS-T1-GE3

Manufacturer:Vishay Siliconix

Description:SI2371EDS-T1-GE3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Vishay Siliconix stock available on our website

Case Package:SOT-23

Datasheet:SI2371EDS-T1-GE3 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
Published	2013
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	45mOhm
Terminal Finish	MATTE TIN
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	1W Ta 1.7W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.7W
Turn On Delay Time	7 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	45m Ω @ 3.7A, 10V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C	4.8A Tc
Gate Charge (Qg) (Max) @ Vgs	35nC @ 10V
Rise Time	65ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	2.5V 10V
Vgs (Max)	±12V
Fall Time (Typ)	62 ns
Turn-Off Delay Time	52 ns
Continuous Drain Current (ID)	-4.8A
Threshold Voltage	-600mV
Gate to Source Voltage (Vgs)	12V
Drain to Source Breakdown Voltage	-30V
Max Junction Temperature (Tj)	150°C
Height	1.12mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

SI2371EDS-T1-GE3 Product Details

SI2371EDS-T1-GE3 Description

The SI2371EDS-T1-GE3 is a P-Channel 30 V (D-S) MOSFET. A P-Channel MOSFET is a particular kind of MOSFET in which the channel is primarily made up of holes as current carriers. The majority of the current flowing through the channels of the MOSFET when it is turned on and activated is made up of holes.