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DMG1013T-7

DMG1013T-7

DMG1013T-7

Diodes Incorporated

P-Channel 20 V 0.7 Ohm 0.27 W Enhancement Mode Mosfet - SOT-523

SOT-23

DMG1013T-7 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 14 Weeks
Contact PlatingTin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-523
Number of Pins 3
Weight 2.012816mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 700mOhm
Additional FeatureHIGH RELIABILITY
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 270mW Ta
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation270mW
Turn On Delay Time5.1 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 700m Ω @ 350mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 59.76pF @ 16V
Current - Continuous Drain (Id) @ 25°C 460mA Ta
Gate Charge (Qg) (Max) @ Vgs 0.622nC @ 4.5V
Rise Time8.1ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±6V
Fall Time (Typ) 20.7 ns
Turn-Off Delay Time 28.4 ns
Continuous Drain Current (ID) -460mA
Threshold Voltage -1V
Gate to Source Voltage (Vgs) 6V
Drain Current-Max (Abs) (ID) 0.46A
Drain to Source Breakdown Voltage -20V
Max Junction Temperature (Tj) 150°C
Height 900μm
Length 1.7mm
Width 850μm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:27307 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.069388$0.069388
500$0.051020$25.51
1000$0.042517$42.517
2000$0.039006$78.012
5000$0.036455$182.275
10000$0.033911$339.11
15000$0.032796$491.94
50000$0.032248$1612.4

About DMG1013T-7

The DMG1013T-7 from Diodes Incorporated is a high-performance microcontroller designed for a wide range of embedded applications. This component features P-Channel 20 V 0.7 Ohm 0.27 W Enhancement Mode Mosfet - SOT-523.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the DMG1013T-7, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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